JPH0427714B2 - - Google Patents

Info

Publication number
JPH0427714B2
JPH0427714B2 JP58028514A JP2851483A JPH0427714B2 JP H0427714 B2 JPH0427714 B2 JP H0427714B2 JP 58028514 A JP58028514 A JP 58028514A JP 2851483 A JP2851483 A JP 2851483A JP H0427714 B2 JPH0427714 B2 JP H0427714B2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor substrate
floating gate
silicon substrate
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58028514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59155172A (ja
Inventor
Masashi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58028514A priority Critical patent/JPS59155172A/ja
Publication of JPS59155172A publication Critical patent/JPS59155172A/ja
Publication of JPH0427714B2 publication Critical patent/JPH0427714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP58028514A 1983-02-24 1983-02-24 不揮発性半導体記憶装置 Granted JPS59155172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028514A JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028514A JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59155172A JPS59155172A (ja) 1984-09-04
JPH0427714B2 true JPH0427714B2 (en]) 1992-05-12

Family

ID=12250788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028514A Granted JPS59155172A (ja) 1983-02-24 1983-02-24 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59155172A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3710880B2 (ja) * 1996-06-28 2005-10-26 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPS59155172A (ja) 1984-09-04

Similar Documents

Publication Publication Date Title
JPH0581072B2 (en])
JPH0368542B2 (en])
US4717943A (en) Charge storage structure for nonvolatile memories
JPS6311784B2 (en])
JPS6243179A (ja) 不揮発性メモリ−
JPH0427714B2 (en])
EP0166208B1 (en) Charge storage structure for nonvolatile memory
JPS6161470A (ja) 不揮発性半導体記憶装置
JPH02174171A (ja) 半導体記憶装置
JP2719641B2 (ja) 半導体不揮発メモリ
JP2536686B2 (ja) 不揮発性メモリ
JP2887506B2 (ja) 薄膜トランジスタメモリ
JP2818202B2 (ja) 不揮発性半導体記憶装置
JPS60106175A (ja) 半導体記憶装置の製造方法
JPS63166A (ja) 不揮発性半導体記憶装置
JPS611056A (ja) 不揮発性半導体記憶装置
JPS63278275A (ja) 半導体不揮発性メモリ
JPS6161469A (ja) 不揮発性半導体記憶装置
JPS62245676A (ja) 不揮発性半導体記憶装置
JPS63144577A (ja) 不揮発性半導体記憶装置
JPS62140471A (ja) 不揮発性半導体記憶装置
JPS6362113B2 (en])
JPH0430755B2 (en])
JPS61115353A (ja) 不揮発性半導体記憶装置
JPS63142680A (ja) 半導体記憶装置及びその製造方法